2D network simulation and luminescence characterization of Cu(In,Ga)Se2 thin film modules : Adventures in Cu-chalcogenide solar cells
Identifieur interne : 002121 ( Main/Repository ); précédent : 002120; suivant : 0021222D network simulation and luminescence characterization of Cu(In,Ga)Se2 thin film modules : Adventures in Cu-chalcogenide solar cells
Auteurs : RBID : Pascal:12-0326948Descripteurs français
- Pascal (Inist)
- Luminescence, Hétérogénéité, Electroluminescence, Photoluminescence, Réseau électrique, Simulation électrique, Shunt, Interconnexion, Courant photoélectrique, Evaluation performance, Implémentation, Système alarme, Chaîne fabrication, Cellule solaire, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, Composé quaternaire, Couche mince, Cu(In,Ga)Se2.
English descriptors
- KwdEn :
- Alarm system, Copper selenides, Electrical network, Electrical simulation, Electroluminescence, Gallium selenides, Heterogeneity, Implementation, Indium selenides, Interconnection, Luminescence, Performance evaluation, Photoelectric current, Photoluminescence, Production line, Quaternary compound, Shunt, Solar cell, Thin film.
Abstract
Cu(In,Ga)Se2 thin film modules have achieved a high degree of maturity. A major challenge for a large volume production is the development of inline characterization tools allowing the detection and interpretation of defects and inhomogeneities. The combination of luminescence characterization (electroluminescence and photoluminescence) and electrical 2D network simulation is proposed to detect shunt defects, defective interconnects, and photocurrent inhomogeneities. Additionally, simulation allows the assessment of the impact of such defects on the module performance. Our approach enables the implementation of an early warning system in a production line, helps to identify the origin of a reduced module performance, and enhances the understanding of defects and inhomogeneities.
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Pascal:12-0326948Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">2D network simulation and luminescence characterization of Cu(In,Ga)Se<sub>2</sub> thin film modules : Adventures in Cu-chalcogenide solar cells</title><author><name sortKey="Ott, Thomas" uniqKey="Ott T">Thomas Ott</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>University of Applied Sciences Ulm, Albert-Einstein-Allee 55</s1><s2>89081 Ulm</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName></affiliation></author><author><name sortKey="Runai, Francillina Robert" uniqKey="Runai F">Francillina Robert Runai</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>University of Applied Sciences Ulm, Albert-Einstein-Allee 55</s1><s2>89081 Ulm</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName></affiliation></author><author><name sortKey="Schw Ble, Fabian" uniqKey="Schw Ble F">Fabian Schw Ble</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>University of Applied Sciences Ulm, Albert-Einstein-Allee 55</s1><s2>89081 Ulm</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName></affiliation></author><author><name sortKey="Walter, Thomas" uniqKey="Walter T">Thomas Walter</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>University of Applied Sciences Ulm, Albert-Einstein-Allee 55</s1><s2>89081 Ulm</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0326948</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0326948 INIST</idno><idno type="RBID">Pascal:12-0326948</idno><idno type="wicri:Area/Main/Corpus">001985</idno><idno type="wicri:Area/Main/Repository">002121</idno></publicationStmt><seriesStmt><idno type="ISSN">1062-7995</idno><title level="j" type="abbreviated">Prog. photovolt.</title><title level="j" type="main">Progress in photovoltaics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Alarm system</term><term>Copper selenides</term><term>Electrical network</term><term>Electrical simulation</term><term>Electroluminescence</term><term>Gallium selenides</term><term>Heterogeneity</term><term>Implementation</term><term>Indium selenides</term><term>Interconnection</term><term>Luminescence</term><term>Performance evaluation</term><term>Photoelectric current</term><term>Photoluminescence</term><term>Production line</term><term>Quaternary compound</term><term>Shunt</term><term>Solar cell</term><term>Thin film</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Luminescence</term><term>Hétérogénéité</term><term>Electroluminescence</term><term>Photoluminescence</term><term>Réseau électrique</term><term>Simulation électrique</term><term>Shunt</term><term>Interconnexion</term><term>Courant photoélectrique</term><term>Evaluation performance</term><term>Implémentation</term><term>Système alarme</term><term>Chaîne fabrication</term><term>Cellule solaire</term><term>Séléniure de cuivre</term><term>Séléniure de gallium</term><term>Séléniure d'indium</term><term>Composé quaternaire</term><term>Couche mince</term><term>Cu(In,Ga)Se2</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Cu(In,Ga)Se<sub>2</sub> thin film modules have achieved a high degree of maturity. A major challenge for a large volume production is the development of inline characterization tools allowing the detection and interpretation of defects and inhomogeneities. The combination of luminescence characterization (electroluminescence and photoluminescence) and electrical 2D network simulation is proposed to detect shunt defects, defective interconnects, and photocurrent inhomogeneities. Additionally, simulation allows the assessment of the impact of such defects on the module performance. Our approach enables the implementation of an early warning system in a production line, helps to identify the origin of a reduced module performance, and enhances the understanding of defects and inhomogeneities.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1062-7995</s0></fA01><fA03 i2="1"><s0>Prog. photovolt.</s0></fA03><fA05><s2>20</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>2D network simulation and luminescence characterization of Cu(In,Ga)Se<sub>2</sub> thin film modules : Adventures in Cu-chalcogenide solar cells</s1></fA08><fA11 i1="01" i2="1"><s1>OTT (Thomas)</s1></fA11><fA11 i1="02" i2="1"><s1>RUNAI (Francillina Robert)</s1></fA11><fA11 i1="03" i2="1"><s1>SCHWÄBLE (Fabian)</s1></fA11><fA11 i1="04" i2="1"><s1>WALTER (Thomas)</s1></fA11><fA14 i1="01"><s1>University of Applied Sciences Ulm, Albert-Einstein-Allee 55</s1><s2>89081 Ulm</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>600-605</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>26755</s2><s5>354000504039230130</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. 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